Produktinformationen "Application Note 5990-6995EN | Bipolar Transistor Characterization Using the B2900A Series of SMUs"
Applikationsschrift :: Bipolar Transistor Characterization Using the B2900A-Series of SMUs.
B2901/02/11/12A Precision Source/Measure Unit is a compact and cost-effective bench-top Source/Measure Unit (SMU) with the capability to output and measure both voltage and current. They cover currents from 10 fA to 3 A (DC)/10.5 A (pulse) and voltages from 100 nV to 210 V, which enables you to make a wide range of current versus voltage (IV) measurements more accurately and quickly than ever before. In addition, the B2900A Series of SMUs comes with an intuitive graphical user interface (GUI) and multiple free software control options that make it easy for you to begin making productive measurements immediately, allowing you to choose the solution that best fits your particular application.
These features make the B2900A-Series of SMUs the best solution for accurate characterization of a wide variety of devices such as bipolar transistors.
What is the B2900A Series of SMUs?
An SMU combines the capabilities of a current source, a voltage source, a current meter and a voltage meter along with the capability to switch easily between these various functions into a single instrument. This gives it the ability to evaluate the IV characteristics of devices across all four measurement quadrants without the need for any additional equipment. Besides being able to output and measure voltage or current very accurately, SMUs also possess a compliance feature that allows a limit to be placed on the voltage or current output to prevent device damage. The members of the B2900A Series of SMUs are single or dual channel SMU units that offer a wide range of IV measurement capability for a variety of two-terminal and three-terminal devices. They cover currents from 10 fA to 3 A (DC)/10.5 A (pulse) and voltages from 100 nV to 210 V. In addition to their DC operation mode, the B2900A Series of SMUs also has the ability to perform pulsed measurements in order to prevent device self-heating from distorting the measurement results.
In general, bipolar transistor characterization requires applying different voltages and currents under either constant or the swept conditions to the transistor terminals....